Infrared thermal‑imaging technology generates images based on objects’ own thermal radiation, divided into two core bands: Mid‑Wave Infrared (MWIR, 3–5μm) with high daytime sensitivity yet vulnerable to sunlight reflection, and Long‑Wave Infrared (LWIR, 8–14μm) with stable night‑time imaging yet susceptible to ambient thermal noise. Traditional single‑band infrared sensors choose only one band, failing to realize all‑weather day‑and‑night precise monitoring.
Type‑II Superlattice (T2SL)is a next‑gen infrared semiconductor material co‑developed by Fujitsu and the U.S. Army Research Laboratory. Adopting nanoscale InAs/GaSb layered structures, it realizessimultaneous MWIR & LWIR dual‑band detectionon a single chip. Core technical logic: MWIR identifies high‑temperature heat sources while LWIR detects weak low‑temperature heat sources. AI‑powered dual‑spectrum comparison algorithms eliminate interference from sunlight, ground thermal radiation and clouds to lock real targets precisely.
Compared with traditional Mercury‑Cadmium‑Telluride (MCT) infrared chips, T2SL features three major advantages. First,mass‑production readinesswith mature semiconductor processes and 50% lower cost. Second, ultra‑high temperature sensitivity down to 0.05℃ for capturing tiny temperature anomalies. Third, megapixel high resolution to solve long‑distance identification weaknesses of traditional low‑resolution 320×240 devices.
Currently, this technology has been applied in early forest‑fire warning, post‑earthquake search‑and‑rescue, border security and power‑equipment overheating detection, becoming a next‑gen infrared perception route for global public security fields.